Dublin, Sept. 21, 2021 (GLOBE NEWSWIRE) -- The "Global and China Power discrete (IGBT + MOSFET) Market Insight Report, 2021-2025" report has been added to ResearchAndMarkets.com's offering. In 2020, ...

This application note presents the MOSFET/IGBT drivers theory and its applications. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques ...

This two part article compares the switching and conduction loss performance of the latest generation of punch-through (PT) IGBTs with power MOSFETs. Also included is a brief overview of the PT IGBT ...

With the race towards highest efficiency, innovative topologies are more often considered for the development of new power conversion products. A device with the low ON state voltage of an IGBT and ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Miscellaneous IGBT vs SiC MOSFET comparison: Structure and Cost Analysis" report to their offering. The report provides ...

Dublin, Jan. 27, 2025 (GLOBE NEWSWIRE) -- The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT ...

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...

Using a gate drive optocoupler with MOSFET buffer driving capability enables users to scale IGBT gate drive designs to the power requirements for a wide range of motor drive and inverter systems.

The ultra-fast IGBT compares favorably with the super junction MOSFET in terms of matched or superior performance, an optimized diode at an elevated temperature, and a competitive price tag. In the ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...