Abstract: A GaN on engineered bulk silicon (GaN-on-EBUS) power IC platform featuring an industry-standard 200-V GaN power HEMT epi-structure has been recently demonstrated, showing effective isolation ...
Abstract: In this article, a hybrid Si/Si carbide (SiC) switch (HyS) modulation with minimum SiC MOSFET conduction (mcHyS) is experimentally characterized, so as to derive its conduction and switching ...
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