Abstract: Through careful design of the area ratio (AR) of the back-end-of-line (BEOL)-compatible metal–ferroelectric–metal–insulator–semiconductor (MFMIS) ferroelectric field-effect transistor (FeFET ...
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Abstract: We are proposing a double gate junction-less device with a processing temperature compatible with state-of-the-art dense low k dielectric back-end of line copper process. The thermal ...
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