Abstract: In this paper, we present our recent studies on multi-Vt gate stack technology elements required for Nanosheet and CFET devices, which are WFM scaling and interface dipole engineering. MoN ...
Abstract: In this work, the robust single-event irradiation-hardened capability is demonstrated in a novel 4H-SiC split gate integrated PN MOSFET (SGPN-MOSFET). The gate of the proposed SiC MOSFET was ...
Morning Overview on MSN
Chipmaking tools may skyrocket in cost, not just RAM, experts say
Memory prices are grabbing headlines, but the more consequential story for the next decade of computing is unfolding one layer deeper in the supply chain. The specialized tools that etch, deposit, and ...
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