IEEE

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

Abstract: A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch commercial foundry with three ...
IEEE

LiP-LLM: Integrating Linear Programming and Dependency Graph With Large Language Models for Multi-Robot Task Planning

Abstract: This study proposes LiP-LLM: integrating linear programming and dependency graph with large language models (LLMs) for multi-robot task planning. For multi-robots to efficiently perform ...